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Structural and electrical properties of Mo/n‐GaN Schottky diodes
Author(s) -
Reddy V. Rajagopal,
Ramesh C. K.,
Choi ChelJong
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521313
Subject(s) - schottky barrier , annealing (glass) , schottky diode , materials science , analytical chemistry (journal) , auger electron spectroscopy , nitride , optoelectronics , diode , chemistry , nanotechnology , metallurgy , physics , chromatography , layer (electronics) , nuclear physics
The electrical and structural properties of molybdenum (Mo) Schottky contact to n‐type GaN (4.07 × 10 18 cm –3 ) have been investigated before and after annealing at 600 °C. Measurements show that the Schottky barrier height of the as‐deposited sample was 0.81 eV ( I – V ) and 1.02 eV ( C – V ), respectively. It is shown that when the sample is annealed at 400 °C the Schottky barrier height slightly decreases to 0.74 eV ( I – V ) and 0.92 eV ( C – V ), respectively. However, the barrier height degraded to 0.56 and 0.73 eV when the sample was annealed at 600 °C for 1 min in nitrogen ambient. Based on the Auger electron microscopy and X‐ray diffraction results, the formation of nitride phases at the Mo/n‐GaN interface could be the reason for degradation of Schottky barrier height upon annealing at 600 °C. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)