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Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
Author(s) -
Kim Yong Tae,
Park Ji Ho
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521296
Subject(s) - atomic layer deposition , deposition (geology) , diffusion barrier , layer (electronics) , plasma , analytical chemistry (journal) , materials science , amorphous solid , thin film , diffusion , dielectric , electrical resistivity and conductivity , phase (matter) , chemistry , nanotechnology , optoelectronics , crystallography , electrical engineering , organic chemistry , physics , paleontology , engineering , quantum mechanics , sediment , biology , thermodynamics
Abstract W–C–N films have been deposited on a tetraethylorthosilicate (TEOS) interlayer dielectric with atomic layer deposition (ALD) cycles of WF 6 –N 2 –CH 4 gases and the exposure cycles of N 2 and CH 4 are synchronized with a pulse plasma. The W–C–N films on TEOS layer follow the ALD mechanism, keep a constant deposition rate of 0.2 nm/cycle from 10 to 100 cycles, and have fairly low resistivity (300 µΩ cm). As a diffusion barrier for Cu interconnection the W–C–N films maintain the amorphous phase and no Cu interdiffusion occurs even at 800 °C for 30 min. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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