Partial dislocations in wurtzite GaN | Zendy

Komninou Ph. | Zendy; Kioseoglou J. | Zendy; Dimitrakopulos G. P. | Zendy; Kehagias Th. | Zendy; Karakostas Th. | Zendy

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Partial dislocations in wurtzite GaN

Author(s) -

Komninou Ph.,

Kioseoglou J.,

Dimitrakopulos G. P.,

Kehagias Th.,

Karakostas Th.

Publication year - 2005

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200521263

Subject(s) - wurtzite crystal structure , partial dislocations , burgers vector , crystallography , atom (system on chip) , stacking fault , stacking , materials science , transmission electron microscopy , core (optical fiber) , condensed matter physics , dislocation , molecular physics , physics , chemistry , nanotechnology , hexagonal crystal system , nuclear magnetic resonance , computer science , composite material , embedded system

The partial dislocations in wurtzite‐structured GaN are reviewed and new results are presented. A multiplicity of partials is possible depending on stacking fault (SF) type, orientation, and interactions. The partials that delimit the I 1 intrinsic basal SFs have 5/7, 8, or 12‐atom cores as more probable configurations. The core structures of 90° partial dislocations with 1/6〈20 $ \bar 2 $ 3〉 Burgers vector were studied from high resolution transmission electron microscopy observations in comparison with simulated models obtained from energetic calculations. Two cases were distinguished with one structure involving a 5/7 or 12‐atom ring core and the other an 8‐atom ring core. Another type of partials, in particular dislocations accommodating mirror variants of basal SFs were also studied experimentally. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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