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Partial dislocations in wurtzite GaN
Author(s) -
Komninou Ph.,
Kioseoglou J.,
Dimitrakopulos G. P.,
Kehagias Th.,
Karakostas Th.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521263
Subject(s) - wurtzite crystal structure , partial dislocations , burgers vector , crystallography , atom (system on chip) , stacking fault , stacking , materials science , transmission electron microscopy , core (optical fiber) , condensed matter physics , dislocation , molecular physics , physics , chemistry , nanotechnology , hexagonal crystal system , nuclear magnetic resonance , computer science , composite material , embedded system
The partial dislocations in wurtzite‐structured GaN are reviewed and new results are presented. A multiplicity of partials is possible depending on stacking fault (SF) type, orientation, and interactions. The partials that delimit the I 1 intrinsic basal SFs have 5/7, 8, or 12‐atom cores as more probable configurations. The core structures of 90° partial dislocations with 1/6〈20 $ \bar 2 $ 3〉 Burgers vector were studied from high resolution transmission electron microscopy observations in comparison with simulated models obtained from energetic calculations. Two cases were distinguished with one structure involving a 5/7 or 12‐atom ring core and the other an 8‐atom ring core. Another type of partials, in particular dislocations accommodating mirror variants of basal SFs were also studied experimentally. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)