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A photo‐dependent capacitance model of GaAs MESFET's
Author(s) -
Narasimha Murty Neti V. L.,
Jit S.
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521258
Subject(s) - mesfet , capacitance , optoelectronics , materials science , diffusion capacitance , saturation (graph theory) , schottky diode , schottky barrier , saturation current , electrical engineering , chemistry , voltage , field effect transistor , transistor , engineering , electrode , mathematics , combinatorics , diode
A new and simple analytical model for determining the photo‐effects on the gate–source and gate–drain capacitances of GaAs MESFET's has been presented for both the linear and saturation regions. A new model for the photovoltage developed across the Schottky junction due to the illumination has been used to investigate the photo‐dependent characteristics of the above capacitances. It has been observed that the gate–source and gate–drain capacitances are increased with the increase in the incident illumination level to the device in its linear region of operation whereas in the saturation region, the gate–source capacitance is increased but the gate–drain capacitance is observed to be decreased with the increase in the incident optical intensity level. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)