Premium
GaN heteroepitaxial growth on LiNbO 3 (0001) step substrates with AlN buffer layers
Author(s) -
Tsuchiya Yousuke,
Kobayashi Atsushi,
Ohta Jitsuo,
Fujioka Hiroshi,
Oshima Masaharu
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521226
Subject(s) - materials science , buffer (optical fiber) , full width at half maximum , pulsed laser deposition , layer (electronics) , optoelectronics , deposition (geology) , thin film , nanotechnology , telecommunications , paleontology , sediment , computer science , biology
We grew GaN films on atomically‐flat LiNbO 3 substrates incorporating low temperature AlN buffer layers by pulsed laser deposition (PLD) and investigated their structural properties. The full‐width‐at‐half maximum (FWHM) values of the XRD 11–24 rocking curves were reduced from 0.59° to 0.23° by the inclusion of the low temperature AlN buffer layers. The surface morphology was also improved by the insertion of the AlN buffer layers. These improvements in structural properties are quite consistent with the fact that the intermixed layer thickness at the heterointerface is reduced from 4 to 2 nm by the use of low temperature AlN. These results indicate that PLD growth on atomically‐flat substrates with AlN buffer layers is quite promising for preparing high quality GaN on LiNbO 3 substrates. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)