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Diamond light emitting diode activated with Xe optical centers
Author(s) -
Zaitsev A. M.,
Bergman A. A.,
Gorokhovsky A. A.,
Huang Mengbing
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521125
Subject(s) - electroluminescence , diamond , materials science , diode , optoelectronics , ion implantation , light emitting diode , ion , annealing (glass) , doping , chemistry , nanotechnology , organic chemistry , layer (electronics) , composite material
A diamond light emitting diode (LED) activated with Xe‐related optical centres is reported. The device was made on a high quality single crystal CVD diamond substrate using B + and Li + ion implantation, subsequent implantation by Xe + ions and vacuum annealing to 1400 °C. A diode behaviour with the rectification ratio of 10 5 at 100 V was achieved. The electroluminescence (EL) of the device was found to concentrate at the B + ion doped p‐type area likely as a result of dominating injection of holes. The room temperature EL spectrum in the range 450 to 850 nm was presented by a narrow band emission of the zero phonon lines 812.5 nm and 794 nm of the Xe centre on a low emission background of the 575 nm nitrogen‐related centre. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)