Diamond light emitting diode activated with Xe optical centers | Zendy

Zaitsev A. M. | Zendy; Bergman A. A. | Zendy; Gorokhovsky A. A. | Zendy; Huang Mengbing | Zendy

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Diamond light emitting diode activated with Xe optical centers

Author(s) -

Zaitsev A. M.,

Bergman A. A.,

Gorokhovsky A. A.,

Huang Mengbing

Publication year - 2006

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200521125

Subject(s) - electroluminescence , diamond , materials science , diode , optoelectronics , ion implantation , light emitting diode , ion , annealing (glass) , doping , chemistry , nanotechnology , organic chemistry , layer (electronics) , composite material

A diamond light emitting diode (LED) activated with Xe‐related optical centres is reported. The device was made on a high quality single crystal CVD diamond substrate using B + and Li + ion implantation, subsequent implantation by Xe + ions and vacuum annealing to 1400 °C. A diode behaviour with the rectification ratio of 10 5 at 100 V was achieved. The electroluminescence (EL) of the device was found to concentrate at the B + ion doped p‐type area likely as a result of dominating injection of holes. The room temperature EL spectrum in the range 450 to 850 nm was presented by a narrow band emission of the zero phonon lines 812.5 nm and 794 nm of the Xe centre on a low emission background of the 575 nm nitrogen‐related centre. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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