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Deep defect related photoluminescence in heavily doped CuGaTe 2 crystals
Author(s) -
Jagomägi Andri,
Krustok Jüri,
Grossberg Maarja,
Danilson Mati,
Raudoja Jaan
Publication year - 2006
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521118
Subject(s) - photoluminescence , impurity , recombination , doping , crystallite , semiconductor , materials science , spectral line , condensed matter physics , optoelectronics , molecular physics , chemistry , physics , biochemistry , organic chemistry , astronomy , metallurgy , gene
CuGaTe 2 samples very often exhibit optical and electrical properties of heavily doped semiconductors. This paper investigates the low temperature photoluminescence properties of polycrystalline CuGaTe 2 samples. The photoluminescence spectra of “heavily doped” semiconductors are usually characterized by the broadening of the photoluminescence bands that is caused by the fluctuations of the forbidden band edges. The deep photoluminescence region observed (0.8–1.3 eV) consists of two peaks. One of them is located at 0.955 eV and has been reported before. Another, totally new band was discovered at 1.14 eV. The low‐temperature j‐shift of both bands was detected. Also, rather significant blue shift with the increasing temperature was noticed. It is proposed that both bands consist of two recombination channels. At low temperatures tail‐to‐impurity recombination dominates. As the temperature increases, the tail‐to‐impurity recombination transforms into band‐to‐impurity recombination. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)