Premium
Properties of intergrowths and partial dislocations in mercury‐based HTSC oxides
Author(s) -
Eyidi Dominique,
Tall Papa D.,
Rabier Jacques
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521028
Subject(s) - partial dislocations , crystallography , stacking , transmission electron microscopy , stacking fault , nucleation , condensed matter physics , materials science , superconductivity , relaxation (psychology) , chemistry , dislocation , nanotechnology , physics , psychology , social psychology , organic chemistry
Intergrowths, stacking faults and dislocations have been investigated by transmission electron microscopy in (Hg, Re)Ba 2 Ca 2 Cu 3 O 8+ δ and HgBa 2 CaCu 2 O 6+ δ bulk superconductors. The stacking fault vectors and the Burgers vectors of partial edge dislocations associated with the nucleation or the annihilation of [Ca–CuO 2 ] bilayers in the unit cells of both compounds are derived by different methods. We discuss the influence of uniaxial stresses on intergrowth propagation and also mechanisms yielding strain relaxation around intergrowths. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)