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Optical properties of Ge nanowires grown on Si(100) and (111) substrates: Nanowire–substrate heterointerfaces
Author(s) -
Kamenev B. V.,
Sharma V.,
Tsybeskov L.,
Kamins T. I.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200521024
Subject(s) - nanowire , photoluminescence , materials science , substrate (aquarium) , raman scattering , chemical vapor deposition , silicon , raman spectroscopy , optoelectronics , nanotechnology , optics , oceanography , physics , geology
We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at low‐defect density Ge NW – Si substrate interfaces. Both, PL and RS data indicate that Si–Ge intermixing and strain are more pronounced for the Ge NW – (111) Si interface, while NWs grown on (100) Si substrates are relaxed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)