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Vertical chip of GaN‐based light‐emitting diode formed on sapphire substrate
Author(s) -
Kim SeongJin,
Choi YongSeok,
Han YoungHeon,
Kim ChangYeon,
Yu SoonJae,
Kim SongGang
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200520055
Subject(s) - light emitting diode , materials science , optoelectronics , sapphire , electrode , dry etching , diode , substrate (aquarium) , nitride , etching (microfabrication) , gallium nitride , fabrication , junction temperature , optics , power (physics) , nanotechnology , layer (electronics) , laser , chemistry , physics , oceanography , quantum mechanics , geology , medicine , alternative medicine , pathology
Abstract In order to improve GaN‐based light‐emitting diode (LED) performance, a sapphire‐etched vertical‐electrode nitride semiconductor (SEVENS) LED is fabricated by a chemical wet etching technique. The light‐output power, heat dissipation, and reverse electrostatic discharge (ESD) characteristics of SEVENS‐LED are improved compared to those of the conventional NiAu lateral‐electrode (LE) GaN‐based LED formed on the sapphire substrate. The 20 mA light‐output power and reverse ESD pulse amplitude of SEVENS‐LED are approximately 4.5 mW and 2000 V, respectively. The improved LED performance is attributed to changing a lateral electrode to a vertical electrode although the sapphire substrate is not transferred to a conducting substrate. The device fabrication method will be useful for providing us high‐brightness and high‐power GaN‐based LEDs for future solid‐state general lighting applications. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)