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High purity alpha silicon nitride nanowires – synthesis and dielectric properties
Author(s) -
Xie T.,
Wu Y. C.,
Cai W. P.,
Zhang L. D.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200520044
Subject(s) - nanowire , materials science , dielectric , silicon nitride , yield (engineering) , silicon , nitride , nanotechnology , silicon nanowires , chemical engineering , optoelectronics , analytical chemistry (journal) , composite material , chemistry , layer (electronics) , organic chemistry , engineering
High purity single crystal alpha silicon nitride (α‐Si 3 N 4 ) nanowires were obtained in high yield via a simple vapor phase reaction approach without the presence of catalyst. The produced α‐Si 3 N 4 nanowires have diameters mostly ranging from 30 to 100 nm and lengths of several hundred micrometers. The nanowires were grown via vapor–solid (VS) mechanism. The room‐temperature dielectric properties show that the effective dielectric constants of α‐Si 3 N 4 nanowires is higher than that of the α‐Si 3 N 4 micropowders, especially at low frequencies. Analysis of the dielectric properties indicates that the small size effect of nanowires has great influence on the dielectric behavior of the samples. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)