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Measuring the junction temperature of III‐nitride light emitting diodes using electro‐luminescence shift
Author(s) -
Cho Jaehee,
Sone Cheolsoo,
Park Yongjo,
Yoon Euijoon
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200520041
Subject(s) - junction temperature , light emitting diode , optoelectronics , materials science , diode , luminescence , nitride , quantum efficiency , wide bandgap semiconductor , nanotechnology , thermal , physics , layer (electronics) , meteorology
The junction temperature rise of light emitting diodes due to self‐heating effects during operation of the LED is measured using the electro‐luminescence of the band‐to‐band recombination. This method is useful for the junction temperature monitoring of small geometry devices, indirectly. The junction temperature measured in InGaN/GaN multi‐quantum well LEDs with 1 mm 2 device size rises to 180 °C when the input current is 380 mA. The relationship between the junction temperature and the LED efficiency is clarified with experimental results. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)