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Humidity and temperature dependences of oxide lines fabricated by atomic force microscopy based nanolithography
Author(s) -
Ai F.,
Wang J. C.,
Luo L.,
Liu Y.,
Zhou Y. F.,
Pan Z. L.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200520039
Subject(s) - relative humidity , oxide , nanolithography , humidity , atomic force microscopy , materials science , silicon , substrate (aquarium) , layer (electronics) , nanotechnology , optoelectronics , metallurgy , physics , meteorology , fabrication , medicine , oceanography , alternative medicine , pathology , geology
Local nano‐oxidation has been used to write oxide lines on hydrogen‐passivated silicon surfaces by atomic force microscopy. The experimental results suggest that the temperature and humidity have considerable influence on the dimension of as‐grown oxide lines. It is concluded that the size of oxide lines (width and height) increase following the increase of relative humidity or the decrease of temperature of substrate, these can be explained by the variation of the amount of absorbed water layer on the sample surface under different parameters. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)