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Direct Si oxidation with fluorine incorporation using an argon excimer VUV source
Author(s) -
Yu J. J.,
Boyd I. W.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200510037
Subject(s) - fluorine , substrate (aquarium) , excimer laser , full width at half maximum , argon , dangling bond , excimer , analytical chemistry (journal) , irradiation , materials science , oxide , infrared , chemistry , photochemistry , silicon , optoelectronics , optics , laser , organic chemistry , oceanography , physics , nuclear physics , geology
Abstract Direct Si oxidation using an Ar excimer VUV source without substrate heating has led to the rapid growth of oxide layers, with a film thickness of 8 nm being obtained for only 10 min VUV irradiation. With fluorine incorporation, the film thickness was further increased to 21 nm. The 1073 cm –1 absorption band in the infrared spectra for the Si–O stretching vibration was shifted to a higher wavenumber up to 1096 cm –1 while its full width at half maximum (FWHM) was reduced from 64 to 54 cm –1 . The resulting SiOF films were OH‐free. The rapid Si oxidation could be caused by the highly reactive O ( 1 S ) generated by VUV photons, the availability of more Si dangling bonds produced from the replacement of Si in the Si–Si bond by F, and more VUV‐induced O 3 formation at low substrate temperatures. Fluorine incorporated into the Si–O network was directly provided by the VUV dissociated PTFE materials in the reaction chamber. The F contents in the SiOF films could be controlled by varying the VUV source parameters such as the excimer gas pressure. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)