Premium
Growth of highly curved Al 1– x In x N nanocrystals
Author(s) -
Radnóczi György Z.,
Seppänen Timo,
Pécz Béla,
Hultman Lars,
Birch Jens
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200510024
Subject(s) - whisker , whiskers , epitaxy , curvature , nanocrystal , nanowire , crystallography , lattice (music) , crystal structure , materials science , crystal growth , chemical vapor deposition , nanotechnology , chemistry , condensed matter physics , chemical physics , geometry , physics , mathematics , composite material , layer (electronics) , acoustics
A materials structure is reported that is characterized by high lattice curvature assigned to a compositional gradient. The phenomenon occurs for physical vapour deposition of Al 1– x In x N epitaxial thin films with directional fluxes of Al and In at kinetically limited growth conditions. According to our growth model unit cells are incorporated on the growth surfaces of emerging whiskers (nanowires) with a continuously varying lattice parameter depending on their position with respect to Al‐ and In‐rich sides of the whisker. Such curved crystals are effectively quenched solid solutions. We present a description of this generic, self‐assembled curved crystal structure and its implications. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)