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Large quasi‐linear electro‐optical response of BaZr 0.75 Hf 0.25 O 3 thin films by pulsed laser deposition
Author(s) -
Tian H. Y.,
Wang D. Y.,
Zhou X. Y.,
Wang Y.,
Chan H. L. W.,
Choy C. L.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200510017
Subject(s) - thin film , full width at half maximum , electric field , pulsed laser deposition , materials science , deposition (geology) , birefringence , laser , optics , analytical chemistry (journal) , optoelectronics , chemistry , physics , nanotechnology , paleontology , chromatography , quantum mechanics , biology , sediment
Epitaxial BaZr 0.75 Hf 0.25 O 3 (BZH) thin films were grown successfully on MgO (100) substrates by pulsed laser deposition. The FWHM of the rocking curve of the BZH thin film deposited at 650 °C is about 0.6°, and the pole‐figure shows that the BZH thin film has fourfold symmetry with 0.5–1.1° FWHM in the ϕ ‐scanning. A large quasi‐linear electro‐optic effect was observed under an external electric field in a transverse geometry at 633 nm. The electric‐optic coefficient R c and birefringence shift are found to be 9.145 × 10 –11 m/V and 4 × 10 –3 at 10 kV/mm, respectively. The microstructure of the films and its relation to the observed electric‐optic properties is discussed. It is expected that BZH thin films will have various electric‐optic and microwave applications. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)