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Epitaxial Al/GaN and Au/GaN junctions on as‐grown GaN(0001)1 × 1 surfaces
Author(s) -
Orani D.,
Piccin M.,
Rubini S.,
Pelucchi E.,
Bonanni B.,
Franciosi A.,
Passaseo A.,
Cingolani R.,
Khan A.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461586
Subject(s) - epitaxy , sapphire , materials science , molecular beam epitaxy , optoelectronics , chemical vapor deposition , metalorganic vapour phase epitaxy , schottky barrier , wide bandgap semiconductor , template , gallium nitride , nanotechnology , layer (electronics) , optics , diode , laser , physics
GaN(0001) epilayers were fabricated by rf‐plasma enhanced molecular beam epitaxy on GaN templates. The templates were grown by metalorganic chemical vapor deposition on sapphire. The layers exhibited the 2 × 2 reconstruction of the Ga‐face during growth and the 1 × 1 reconstruction upon cooling. On such surfaces, Al/n‐GaN and Au/n‐GaN junctions were fabricated in‐situ by molecular beam epitaxy. X‐ray photoemission spectroscopy studies allowed us to determine n‐type Schottky barrier heights of 0.61 ± 0.06 and 0.98 ± 0.06 eV, respectively, for the two types of epitaxial junctions. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)