Epitaxial Al/GaN and Au/GaN junctions on as‐grown GaN(0001)1 × 1 surfaces | Zendy

Orani D. | Zendy; Piccin M. | Zendy; Rubini S. | Zendy; Pelucchi E. | Zendy; Bonanni B. | Zendy; Franciosi A. | Zendy; Passaseo A. | Zendy; Cingolani R. | Zendy; Khan A. | Zendy

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Epitaxial Al/GaN and Au/GaN junctions on as‐grown GaN(0001)1 × 1 surfaces

Author(s) -

Orani D.,

Piccin M.,

Rubini S.,

Pelucchi E.,

Bonanni B.,

Franciosi A.,

Passaseo A.,

Cingolani R.,

Khan A.

Publication year - 2005

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200461586

Subject(s) - epitaxy , sapphire , materials science , molecular beam epitaxy , optoelectronics , chemical vapor deposition , metalorganic vapour phase epitaxy , schottky barrier , wide bandgap semiconductor , template , gallium nitride , nanotechnology , layer (electronics) , optics , diode , laser , physics

GaN(0001) epilayers were fabricated by rf‐plasma enhanced molecular beam epitaxy on GaN templates. The templates were grown by metalorganic chemical vapor deposition on sapphire. The layers exhibited the 2 × 2 reconstruction of the Ga‐face during growth and the 1 × 1 reconstruction upon cooling. On such surfaces, Al/n‐GaN and Au/n‐GaN junctions were fabricated in‐situ by molecular beam epitaxy. X‐ray photoemission spectroscopy studies allowed us to determine n‐type Schottky barrier heights of 0.61 ± 0.06 and 0.98 ± 0.06 eV, respectively, for the two types of epitaxial junctions. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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