Premium
Improvement of photoluminescence by Si delta‐doping in GaN barrier layer of GaN/In x Ga 1– x N multi‐quantum wells
Author(s) -
Kwon MinKi,
Park IlKyu,
Beak SungHo,
Kim JaYeon,
Park SeongJu
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461576
Subject(s) - photoluminescence , metalorganic vapour phase epitaxy , quantum well , doping , chemical vapor deposition , materials science , barrier layer , optoelectronics , analytical chemistry (journal) , condensed matter physics , layer (electronics) , nanotechnology , chemistry , optics , epitaxy , physics , laser , chromatography
We report on the effect of Si delta doping in the barriers of multi‐quantum wells (MQWs) grown by metalorganic chemical vapor deposition (MOCVD). The room temperature photoluminescence (PL) intensity of the MQW sample with Si delta doped barriers was improved by 33 times compared to that of a MQW sample without Si delta doped barriers. The temperature dependent PL measurement showed slow quenching of the integrated PL intensity of the MQW sample grown by using Si delta doping process as temperature increased compared to that of normal MQW sample. This was attributed to the effective injection of electron from the Si delta doped layer into quantum well (QW) layer as temperature increased and also the higher hole confinement resulted from the higher band offset. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)