Demonstration of a GaN‐spacer high electron mobility transistor with low alloy scattering | Zendy

Palacios T. | Zendy; Shen L. | Zendy; Keller S. | Zendy; Chakraborty A. | Zendy; Heikman S. | Zendy; Buttari D. | Zendy; DenBaars S. P. | Zendy; Mishra U. K. | Zendy

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Demonstration of a GaN‐spacer high electron mobility transistor with low alloy scattering

Author(s) -

Palacios T.,

Shen L.,

Keller S.,

Chakraborty A.,

Heikman S.,

Buttari D.,

DenBaars S. P.,

Mishra U. K.

Publication year - 2005

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200461563

Subject(s) - high electron mobility transistor , ohmic contact , materials science , transistor , optoelectronics , scattering , alloy , induced high electron mobility transistor , fermi gas , electron mobility , wide bandgap semiconductor , conduction band , electron , electrical engineering , nanotechnology , optics , metallurgy , physics , layer (electronics) , voltage , quantum mechanics , engineering

A new kind of high electron mobility transistor (HEMT) based on a GaN‐spacer is reported. To confine the two‐dimensional electron gas in this AlGaN‐free HEMT, a GaN/ultrathin AlN/GaN pseudo‐hetero‐junction has been used. The effective conduction band discontinuity is given by the AlN polarization‐induced electric field. This new transistor shows a superior general performance than the standard HEMT due to a decrease in the alloy and real space transfer scattering, as well as lower ohmic contact resistance. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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