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Demonstration of a GaN‐spacer high electron mobility transistor with low alloy scattering
Author(s) -
Palacios T.,
Shen L.,
Keller S.,
Chakraborty A.,
Heikman S.,
Buttari D.,
DenBaars S. P.,
Mishra U. K.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461563
Subject(s) - high electron mobility transistor , ohmic contact , materials science , transistor , optoelectronics , scattering , alloy , induced high electron mobility transistor , fermi gas , electron mobility , wide bandgap semiconductor , conduction band , electron , electrical engineering , nanotechnology , optics , metallurgy , physics , layer (electronics) , voltage , quantum mechanics , engineering
A new kind of high electron mobility transistor (HEMT) based on a GaN‐spacer is reported. To confine the two‐dimensional electron gas in this AlGaN‐free HEMT, a GaN/ultrathin AlN/GaN pseudo‐hetero‐junction has been used. The effective conduction band discontinuity is given by the AlN polarization‐induced electric field. This new transistor shows a superior general performance than the standard HEMT due to a decrease in the alloy and real space transfer scattering, as well as lower ohmic contact resistance. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)