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Post‐annealing effects on trapping behaviors in AlGaN/GaN HEMTs
Author(s) -
Kim H.,
Lee J.,
Lu W.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461555
Subject(s) - trapping , annealing (glass) , materials science , time constant , optoelectronics , threshold voltage , transistor , schottky diode , electron , analytical chemistry (journal) , voltage , chemistry , electrical engineering , physics , metallurgy , ecology , diode , quantum mechanics , chromatography , biology , engineering
Trapping effects in AlGaN/GaN high‐electron mobility transistors (HEMTs) are investigated using dynamic current–voltage ( I – V ) measurements with different quiescent biases and pulse widths to examine post‐annealing effects after Schottky gate formation. The results show that trapping/detrapping phenomena by traps with emission/capture time constants of shorter than 10 µs are dominant in non‐annealed devices. The devices annealed at 400 °C for 10 minutes in a furnace exhibit significantly smaller current dispersion and have a smaller number of traps. However, after post‐annealing, a small number of traps with a time constant of longer than 10 µs are created or activated. Further annealing at 400 °C leads to increase in current dispersion, indicating that more traps with an emission time constant >10 ms are created. These traps induced by post‐annealing are responsible for the trapping effects when pulse width ≥10 µs. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)