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Improvement of crystalline quality of GaPN layers grown by RF‐plasma MBE with ion collector
Author(s) -
Utsumi A.,
Furukawa Y.,
Yonezu H.,
Yoshizumi Y.,
Morita Y.,
Wakahara A.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461529
Subject(s) - ion , materials science , photoluminescence , luminescence , annealing (glass) , ion beam , optoelectronics , analytical chemistry (journal) , chemistry , composite material , organic chemistry , chromatography
The effects on structural crystalline quality and luminescence properties of deflecting nitrogen (N) ions away from the substrate were investigated for GaPN layers grown on GaP substrates by RF‐plasma MBE. The GaPN layers were grown with and without use of an ion collector for N ions deflection. The Pendellösung fringes in the X‐ray diffraction spectrum were more distinct in samples grown with than without the ion collector. This result indicates that the structural and/or interface quality were improved by preventing ion‐induced damage. The sample grown with the ion collector indicated higher crystalline quality by the more linear excitation power dependence of photoluminescence intensity. On the other hand, the sample grown without the ion collector appears to contain a high concentration of non‐radiative recombination centers related to the ion‐induced damage. The ion‐induced damage cannot be completely healed by rapid thermal annealing. To summarize, eliminating ion exposure during growth improves the crystalline quality and radiative recombination properties of the GaPN layer. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)