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MOVPE homoepitaxial growth on vicinal GaN(0001) substrates
Author(s) -
Xu Xueping,
Vaudo Robert P.,
Flynn Jeffery,
Dion Joe,
Brandes George R.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461521
Subject(s) - vicinal , metalorganic vapour phase epitaxy , hillock , materials science , morphology (biology) , substrate (aquarium) , wafer , epitaxy , doping , silicon , optoelectronics , crystallography , nanotechnology , chemistry , composite material , layer (electronics) , biology , ecology , organic chemistry , genetics
Homoepitaxial growth of GaN by metal organic vapor phase epitaxy (MOVPE) was systematically evaluated using nominal c ‐plane and various vicinal GaN(0001) wafers: 1°, 2°, 4°, and 8° offcut in the directions of 〈10 $\bar 1$ 0〉 and 〈11 $\bar 2$ 0〉. It was found that a hillock morphology formed on the nominal c ‐plane substrate whereas smooth epi films were formed on vicinal substrates. Silicon‐doped films showed similarly improved surface morphology with offcut angle, however Mg‐doped films exhibited a rougher microstructure. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)