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Temperature dependence of carrier lifetimes in InN
Author(s) -
Chen Fei,
Cartwright A. N.,
Lu H.,
Schaff W. J.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461501
Subject(s) - photoluminescence , radiative transfer , recombination , spontaneous emission , intensity (physics) , non radiative recombination , carrier lifetime , atomic physics , doping , infrared , materials science , chemistry , physics , condensed matter physics , optoelectronics , semiconductor materials , optics , semiconductor , silicon , biochemistry , laser , gene
Time‐resolved pump–probe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10 18 to 10 19 cm –3 . The observed decay time at 20 K is well explained by a dominating radiative interband recombination, while at room temperature it is attributed to a defect related nonradiative recombination channel. The temperature dependence of the radiative lifetime is deduced from the measurements of both differential transmission decay time and PL intensity. For the best quality sample, we find the radiative lifetime increases proportionally to T 3/2 , as theory predicts when a k ‐selection rule holds, which suggests that the radiative band‐to‐band transition accounts for the observed infrared photoluminescence over the entire temperature. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)