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Dislocation density reduction in GaN using porous SiN interlayers
Author(s) -
Sagar Ashutosh,
Feenstra R. M.,
Inoki C. K.,
Kuan T. S.,
Fu Y.,
Moon Y. T.,
Yun F.,
Morkoç H.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461486
Subject(s) - overlayer , materials science , dislocation , nucleation , metalorganic vapour phase epitaxy , epitaxy , chemical vapor deposition , thin film , crystallography , composite material , condensed matter physics , layer (electronics) , nanotechnology , chemistry , physics , organic chemistry
The influence of a thin porous SiN x interlayer on the growth of GaN by metalorganic chemical vapor deposition (MOCVD) has been studied. The interlayer is deposited on a GaN template by introducing silane in the presence of ammonia into the MOCVD chamber, and a GaN overlayer is deposited on the interlayer. The SiN x interlayer produces inhomogeneous nucleation and lateral growth of the overlayer, causing bending of dislocations towards facet walls, and it also blocks some dislocations from entering the overlayer. The dislocation density for a GaN overlayer grown on a SiN x interlayer was reduced to 7 × 10 8 cm –2 , which is an order of magnitude less than that for a control sample grown without an interlayer. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)