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Uniform III‐nitride growth in single wafer horizontal MOVPE reactors
Author(s) -
Hardtdegen H.,
Kaluza N.,
Steins R.,
Javorka P.,
Wirtz K.,
Alam A.,
Schmitt T.,
Beccard R.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461468
Subject(s) - susceptor , metalorganic vapour phase epitaxy , wafer , heterojunction , nitride , materials science , layer (electronics) , gas phase , optoelectronics , quality (philosophy) , nanotechnology , chemistry , epitaxy , physics , quantum mechanics
Using a new susceptor set‐up a systematic study on gas phase transport properties was carried out with the aim of obtaining layer uniformity. By determining the influence of the transport parameters on growth it is then possible to achieve symmetric growth profiles and highly uniform GaN and AlGaN layers as well as heterostructures exhibiting a high material quality with respect to their structural and electrical properties. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)