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Influence of surface passivation on low‐frequency noise properties of AlGaN/GaN high electron mobility transistor structures
Author(s) -
Vitusevich S. A.,
Petrychuk M. V.,
Danylyuk S. V.,
Kurakin A. M.,
Klein N.,
Belyaev A. E.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461461
Subject(s) - passivation , materials science , high electron mobility transistor , heterojunction , optoelectronics , infrasound , transistor , doping , noise (video) , condensed matter physics , layer (electronics) , nanotechnology , electrical engineering , physics , voltage , engineering , artificial intelligence , computer science , acoustics , image (mathematics)
We investigated low‐frequency noise in passivated and nonpassivated AlGaN/GaN high electron mobility transistor (HEMT) heterostructures grown on SiC substrate. The heterostructure layers are grown without intentionally doping the barrier material and two‐dimensional gas appears at the interface only due to polarization effects. Transmission line model structures with different lengths of the conducting channel were studied in a wide range of temperatures in a linear regime. The magnitude of the noise and Hooge parameter demonstrate different dependence on the distance between contacts in passivated and non‐passivated structures. Noise reduction in the structure for around one order of magnitude after passivation was revealed and different origins of the noise before and after passivation established. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)