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Effects of the low temperature buffer and annealing on the properties of InN layers grown by MOVPE
Author(s) -
Ruterana P.,
Morales M.,
Gourbilleau F.,
Singh P.,
Drago M.,
Schmidtling T.,
Pohl U. W.,
Richter W.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461444
Subject(s) - metalorganic vapour phase epitaxy , annealing (glass) , nucleation , photoluminescence , materials science , buffer (optical fiber) , reciprocal lattice , layer (electronics) , optoelectronics , analytical chemistry (journal) , nanotechnology , diffraction , chemistry , composite material , optics , epitaxy , telecommunications , physics , organic chemistry , chromatography , computer science
InN thin films grown by MOVPE with a thickness of about 100 nm are investigated. Growth was carried out in either two or three steps: deposition of a low temperature nucleation layer at 400 °C and subse‐ quent growth of a thicker InN layer at 530 °C, or use of a GaN buffer layer which was annealed at 1050 °C prior to deposition of the low temperature InN buffer layer. The structural evolution of the layers during a 20 min annealing step at 540 °C under nitrogen was investigated using AFM and XRD. We analyzed the orientation distribution function of the layers by XRD reciprocal space maps applying ψ and χ scans. The results show that the crystalline layer quality is improved by use of a GaN buffer, as also assessed from higher photoluminescence intensity. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)