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Enhancement effect of Tb‐related luminescence in Al x Ga 1– x N with the AlN molar fraction 0 ≤ x ≤ 1
Author(s) -
Wakahara A.,
Nakanishi Y.,
Fujiwara T.,
Yoshida A.,
Ohshima T.,
Kamiya T.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461430
Subject(s) - luminescence , quenching (fluorescence) , intensity (physics) , analytical chemistry (journal) , composition (language) , mole fraction , materials science , thermal , molar ratio , chemistry , thermodynamics , optics , fluorescence , physics , optoelectronics , linguistics , philosophy , biochemistry , chromatography , catalysis
Abstract Effects of Al composition on luminescence properties corresponding to Tb 3+ inner level transitions are investigated. When the Al composition is larger than 0.3, luminescence corresponding to 5 D 4 – 7 F J ( J = 3, 4, 5, 6) transitions is observed at room temperature, while 5 D 3 – 7 F J transition such as 5 D 3 – 7 F 5 can be observed only at low temperature. As the Al composition increases, the luminescence intensity is increased super linearly at first, and then linearly increased. Thermal quenching of luminescence intensity is dramatically improved as increasing the Al composition. Major effect of AlGaN is well explained by reduction of energy‐back‐transfer process. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)