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Positron annihilation study of HVPE grown thick GaN layers
Author(s) -
Misheva M.,
Larsson H.,
Gogova D.,
Monemar B.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461420
Subject(s) - positron annihilation spectroscopy , vacancy defect , sapphire , photoluminescence , materials science , annihilation , epitaxy , gallium , positron annihilation , metalorganic vapour phase epitaxy , doping , crystallographic defect , spectroscopy , analytical chemistry (journal) , hydride , gallium nitride , positron , optoelectronics , crystallography , layer (electronics) , optics , nanotechnology , chemistry , metallurgy , nuclear physics , physics , metal , laser , quantum mechanics , chromatography , electron
Single‐crystalline GaN layers with a thickness up to 330 µm were grown by hydride vapor phase epitaxy on basal plane sapphire at gallium stable conditions in a bottom‐fed vertical reactor at atmospheric pressure. Positron annihilation spectroscopy experiments were implemented in order to identify native point defects in the as‐grown non‐intentionally doped n‐type GaN. Comparatively low concentrations of Ga vacancy related defects in the order of 10 16 to 10 17 cm –3 were extracted from the positron annihilation spectroscopy data. The Ga vacancy defect concentration was related to the intensity of the yellow photoluminescence band centered at 2.2 eV. The influence of the growth rate on the Ga vacancy related defect concentration was investigated. A trend of decreasing of the defect concentration with increasing of layer thickness is observed, which correlates with improving crystalline quality with the thickness. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)