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InGaN multiple quantum well lasers grown by MBE
Author(s) -
Heffernan J.,
Kauer M.,
Johnson K.,
Zellweger C.,
Hooper S. E.,
Bousquet V.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461407
Subject(s) - laser , materials science , optoelectronics , molecular beam epitaxy , diode , duty cycle , quantum well , dislocation , blue laser , sapphire , epitaxy , nanotechnology , optics , layer (electronics) , voltage , electrical engineering , physics , composite material , engineering
We report progress in the development of InGaN multiple quantum well laser diodes grown by MBE. Lasers were grown by gas‐source MBE using ammonia as the source of nitrogen. Devices were grown on both GaN template substrates with dry‐etched laser facets, and on low dislocation density free‐standing GaN substrates where cleaved laser facets are possible. We have achieved a minimum threshold current density of ∼11 kA cm –2 on templates and ∼7 kA cm –2 on free‐standing GaN. On GaN substrates we have achieved room temperature operation with a pulsed duty cycle of 10%. Further optimisation of the device is required to reduce thermal effects and achieve CW operation. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)