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Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEG
Author(s) -
Wells A.,
Uren M. J.,
Balmer R. S.,
Nash K. J.,
Martin T.,
Missous M.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461352
Subject(s) - scattering , phonon scattering , materials science , alloy , phonon , surface roughness , surface finish , polar , condensed matter physics , layer (electronics) , optoelectronics , optics , composite material , physics , astronomy
The alloy, polar optical and acoustic phonon scattering terms in the mobility in a GaN HFET have been extracted as a function of temperature and number density. It was found that roughness and Coulomb scattering are insignificant at room temperature. Samples with and without an AlN layer at the AlGaN/GaN interface were compared and used to extract the alloy scattering. At room temperature the mobility was dominated by intrinsic scattering terms. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)