Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEG | Zendy

Wells A. | Zendy; Uren M. J. | Zendy; Balmer R. S. | Zendy; Nash K. J. | Zendy; Martin T. | Zendy; Missous M. | Zendy

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Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEG

Author(s) -

Wells A.,

Uren M. J.,

Balmer R. S.,

Nash K. J.,

Martin T.,

Missous M.

Publication year - 2005

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200461352

Subject(s) - scattering , phonon scattering , materials science , alloy , phonon , surface roughness , surface finish , polar , condensed matter physics , layer (electronics) , optoelectronics , optics , composite material , physics , astronomy

The alloy, polar optical and acoustic phonon scattering terms in the mobility in a GaN HFET have been extracted as a function of temperature and number density. It was found that roughness and Coulomb scattering are insignificant at room temperature. Samples with and without an AlN layer at the AlGaN/GaN interface were compared and used to extract the alloy scattering. At room temperature the mobility was dominated by intrinsic scattering terms. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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