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Use of porous GaAs electrodes in photoelectrochemical cells
Author(s) -
Cojocaru A.,
Simashkevich A.,
Sherban D.,
Tiginyanu I.,
Ursaki V.,
Tsiulyanu I.,
Usatyi I.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461223
Subject(s) - nanoporous , electrode , electrolyte , photosensitivity , semiconductor , materials science , optoelectronics , photoelectrochemical cell , porosity , photoelectrochemistry , electrochemistry , analytical chemistry (journal) , chemistry , nanotechnology , composite material , chromatography
Abstract The photoelectrochemical properties of semiconductor‐electrolyte solar cells with carbon auxiliary electrode and colloidal aqueous solution of Na 2 SiO 3 have been investigated. Bulk n‐type single crystalline and nanoporous GaAs material were used as semiconductor electrodes. Current–voltage characteristics under different illumination intensities and spectral distribution of the photosensitivity were studied. The photopotential was found to reach values as high as 0.46 V for bulk n‐GaAs. The introduction of porosity in GaAs shifts the maximum of the spectral distribution of photosensitivity towards the longwavelength region and increases the short circuit current by a factor of two. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)