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Properties of cubic GaN films obtained by nitridation of porous GaAs(001)
Author(s) -
Kidalov V. V.,
Sukach G. A.,
Revenko A. S.,
Bayda A. D.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461215
Subject(s) - x ray photoelectron spectroscopy , materials science , annealing (glass) , porosity , substrate (aquarium) , nitrogen , analytical chemistry (journal) , diffraction , chemical engineering , composite material , chemistry , optics , oceanography , physics , organic chemistry , chromatography , engineering , geology
With the help of nitridation of porous GaAs(001) in nitrogen plasma thin films of cubic‐GaN were obtained. The conclusion was made that the quality of the GaN films is dependent on the degree of porosity of the GaAs substrate. XPS spectra were used to investigate the chemical composition of porous GaAs substrates, obtained by electrochemical etching. Porous GaAs substrate at first was annealed in a H 2 flow at a temperature of 550 °C (with the aim of removing oxygen from the surface of the porous GaAs). Then, the porous GaAs substrate was annealed in atomic nitrogen at a temperature of 400 °C, and then annealed in vacuum at 600 °C. From XPS measurement we determined that the annealing in atomic nitrogen leads to the formation of GaN films. X‐ray diffraction measurements show that cubic GaN on porous GaAs substrate has no tensile strain. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)