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High‐aspect‐ratio silicon dioxide pillars
Author(s) -
Trifonov T.,
Rodríguez A.,
Servera F.,
Marsal L. F.,
Pallarès J.,
Alcubilla R.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461205
Subject(s) - pillar , wafer , etching (microfabrication) , aspect ratio (aeronautics) , silicon , hydrofluoric acid , silicon dioxide , materials science , nanotechnology , optoelectronics , isotropic etching , composite material , mechanical engineering , engineering , metallurgy , layer (electronics)
Abstract This paper presents a technique for fabricating high‐aspect‐ratio silicon dioxide pillars by electrochemical etching of n‐type silicon in hydrofluoric acid (HF) solutions. Basic process flow and etching conditions are described, which make it possible to obtain high‐aspect‐ratio pillar arrays with good uniformity. Pillar arrays of different dimensions (i.e. diameter and separation) and of different arrangements can be produced in a single etch step on the same wafer. The large surface area makes these pillar arrays possible candidates for applications in biological sensing. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)