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A novel process for the preparation of thick porous silicon layers with very high porosity
Author(s) -
Feyh A.,
Laermer F.,
Kronmüller S.,
Mokwa W.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461195
Subject(s) - porosity , materials science , etching (microfabrication) , porous silicon , process (computing) , silicon , oxide , chemical engineering , phase (matter) , composite material , layer (electronics) , metallurgy , chemistry , organic chemistry , computer science , engineering , operating system
A novel process for the preparation of thick porous silicon layers having very high porosities is proposed. Starting with thick layers of intermediate porosity the porosity is further increased in an additional step. This is done by means of controlled partial oxidation of the silicon skeleton followed by selective removal of the oxide film in an HF vapor phase etching process. Due to this, porosities beyond 90% are accessible since any further liquid phase contact is avoided and therefore no additional drying steps are necessary. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)