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Influence of NO 2 molecule adsorption on free charge carriers and spin centers in porous silicon
Author(s) -
Konstantinova E. A.,
Osminkina L. A.,
Sharov C. S.,
Timoshenko V. Yu.,
Kashkarov P. K.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461193
Subject(s) - adsorption , dangling bond , porous silicon , silicon , charge carrier , molecule , acceptor , charge (physics) , fourier transform infrared spectroscopy , chemistry , materials science , chemical physics , chemical engineering , organic chemistry , condensed matter physics , physics , optoelectronics , quantum mechanics , engineering
The effect of nitrogen dioxide (NO 2 ) adsorption on free charge carriers and spin centers in porous silicon has been studied by FTIR and ESR spectroscopy. The silicon dangling bond ( P b1 ‐center) density rises with increasing NO 2 pressure ( P NO 2) while free charge carrier concentration depends on P NO 2nonmonotonically. The experimental results are explained by a microscopic model taking into account both the formation of P b1 +–(NO 2 ) – donor–acceptor pairs and NO 2 ‐induced oxidation of Si nanocrystal surfaces. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)