Influence of NO 2  molecule adsorption on free charge carriers and spin centers in porous silicon | Zendy

Konstantinova E. A. | Zendy; Osminkina L. A. | Zendy; Sharov C. S. | Zendy; Timoshenko V. Yu. | Zendy; Kashkarov P. K. | Zendy

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Influence of NO 2 molecule adsorption on free charge carriers and spin centers in porous silicon

Author(s) -

Konstantinova E. A.,

Osminkina L. A.,

Sharov C. S.,

Timoshenko V. Yu.,

Kashkarov P. K.

Publication year - 2005

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200461193

Subject(s) - adsorption , dangling bond , porous silicon , silicon , charge carrier , molecule , acceptor , charge (physics) , fourier transform infrared spectroscopy , chemistry , materials science , chemical physics , chemical engineering , organic chemistry , condensed matter physics , physics , optoelectronics , quantum mechanics , engineering

The effect of nitrogen dioxide (NO 2 ) adsorption on free charge carriers and spin centers in porous silicon has been studied by FTIR and ESR spectroscopy. The silicon dangling bond ( P b1 ‐center) density rises with increasing NO 2 pressure ( P NO 2) while free charge carrier concentration depends on P NO 2nonmonotonically. The experimental results are explained by a microscopic model taking into account both the formation of P b1 +–(NO 2 ) – donor–acceptor pairs and NO 2 ‐induced oxidation of Si nanocrystal surfaces. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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