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A new method for luminescent porous silicon formation: reaction‐induced vapor‐phase stain etch
Author(s) -
de Vasconcelos Elder A.,
da Silva E. F.,
dos Santos B. E. C. A.,
de Azevedo W. M.,
Freire J. A. K.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461177
Subject(s) - porous silicon , dissolution , silicon , luminescence , materials science , layer (electronics) , porosity , chemical engineering , etching (microfabrication) , analytical chemistry (journal) , phase (matter) , optoelectronics , nanotechnology , chemistry , composite material , chromatography , organic chemistry , engineering
We report a new method to form reproducible luminescent porous silicon layers in p‐type and n‐type substrates of low and high resisivity, with minimum apparatus and maximum simplicity. No equipment, formation of electrical contacts, illumination or addition of surfactants is needed. The porous silicon layer is formed by exposing the Si surface to the vapor generated by a dissolution reaction of a metal or Si in a HF/HNO 3 mixture. The PL spectra of the layers have peaks located from 1.85 eV to 2.1 eV. The current–voltage characteristics of Al/PS/p‐Si/Al devices formed on these layers are rectifying and follow an exponential dependence at low forward bias and a power law at high forward bias. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)