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Structural and light‐emission modification in chemically‐etched porous silicon
Author(s) -
NavarroUrrios D.,
PérezPadrón C.,
Lorenzo E.,
Capuj N. E.,
Gaburro Z.,
Oton C. J.,
Pavesi L.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461168
Subject(s) - porous silicon , etching (microfabrication) , dissolution , porosity , isotropic etching , materials science , electrolyte , photoluminescence , electrochemistry , silicon , transmission electron microscopy , chemical engineering , scanning electron microscope , reactive ion etching , nanotechnology , analytical chemistry (journal) , optoelectronics , chemistry , composite material , electrode , organic chemistry , layer (electronics) , engineering
After electrochemical etching, we have made a study of the effects generated on p + ‐type porous silicon layers when they are left in presence of the electrolyte for different post‐etching times. Using an interferometric technique, we have monitored the change of its porosity during the post‐etch process due to a chemical dissolution mechanism. These data are complemented with a study of photoluminescence and transmission electron microscopy measurements for different post‐etching times. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)