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Can chemically etched germanium or germanium nanocrystals emit visible photoluminescence?
Author(s) -
Kartopu G.,
Karavanskii V. A.,
Serincan U.,
Turan R.,
Hummel R. E.,
Ekinci Y.,
Gunnæs A.,
Finstad T. G.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461140
Subject(s) - germanium , photoluminescence , nanocrystal , materials science , quantum dot , etching (microfabrication) , nanoparticle , nanotechnology , isotropic etching , optoelectronics , chemical engineering , silicon , layer (electronics) , engineering
Photoluminescence (PL) properties of various Ge‐based nanostructured materials, prepared using methods such as chemical etching, ion implantation and spark processing, have been studied. The PL was much stronger from the samples containing Ge nanocrystals, in comparison with their counterparts with no or less Ge nanoparticles, hinting at the likely role of the quantum confinement in Ge nanocrystals (NCs) in the light emission process. On the other hand, defects in the oxides or Ge–O bonded material alone are also shown to emit light in the same energy zone as with the Ge NCs. Discussion on these results is presented. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)