Wedge‐shaped layers from porous silicon: the basics of laterally graded interference filters | Zendy

Bohn H. G. | Zendy; Marso M. | Zendy

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Wedge‐shaped layers from porous silicon: the basics of laterally graded interference filters

Author(s) -

Bohn H. G.,

Marso M.

Publication year - 2005

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200461126

Subject(s) - perpendicular , interference (communication) , wedge (geometry) , porous silicon , materials science , constant (computer programming) , ohmic contact , porosity , current (fluid) , electric field , equivalent circuit , optics , acoustics , composite material , geometry , physics , computer science , electrical engineering , engineering , mathematics , voltage , layer (electronics) , channel (broadcasting) , quantum mechanics , programming language

The process of making laterally graded interference filters has been reanalyzed. A simple and consistent picture arises if one applies a constant electric field perpendicular to the etch current instead of a constant current. The system is quantitatively modeled by means of a pure ohmic equivalent circuit model. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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