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Synergism of electrochemical and mechanical factors in porous silicon growth
Author(s) -
Parkhutik Vitali,
Udagawa Masayuki,
Harima Yutaka
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200461105
Subject(s) - porous silicon , monocrystalline silicon , silicon , materials science , dissolution , porosity , raman spectroscopy , electrochemistry , stress (linguistics) , porous medium , ultimate tensile strength , nanotechnology , composite material , chemical engineering , metallurgy , chemistry , optics , electrode , engineering , linguistics , physics , philosophy
Here we report new data on mechanical properties of porous silicon films that support a model where both electrochemistry of local dissolution of silicon and mechanical stress factors are playing roles. Using micro‐Raman spectroscopy allowed us to establish the presence of rather high tensile stress in monocrystalline Si in the close vicinity of the interface with porous silicon that supports our assumption of stress‐enhanced pore growth. Our recent data on spontaneous layering of porous silicon films under steady‐state conditions of p‐Si growth also show that the mechanical stress is a key factor in formation of the structure of porous silicon additionally to conventional electrochemical factors. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)