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Electroreflectance and photoreflectance studies of AlGaN/GaN heterostructure with a QW placed inside AlGaN layer
Author(s) -
Drabińska Aneta,
Pakuła Krzysztof,
Baranowski Jacek M.,
Frymak Ilona
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460914
Subject(s) - heterojunction , materials science , polarization (electrochemistry) , optoelectronics , piezoelectricity , condensed matter physics , electric field , diffraction , optics , chemistry , physics , composite material , quantum mechanics
Photoreflectance and electroreflectance spectroscopies are used for characterization of a AlGaN/GaN heterostructure with a QW. Analysis of Franz–Keldysh oscillations in AlGaN and GaN layers allow calculation of the electric‐field dependence on bias in these layers. It was possible to obtain the concentration of charge localized in the QW and the polarization charge located at the AlGaN/GaN interface. The piezoelectric polarization was calculated using the lattice constants obtained from X‐ray diffraction. Combining this with the electroreflectance results allowed the difference of spontaneous polarization between AlGaN and GaN layers to be obtained. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)