Premium
Relevance of phosphorus incorporation and hydrogen removal for Si:P δ ‐doped layers fabricated using phosphine
Author(s) -
Goh K. E. J.,
Oberbeck L.,
Simmons M. Y.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460764
Subject(s) - dopant , phosphine , doping , hydrogen , dopant activation , materials science , molecular beam epitaxy , fabrication , inorganic chemistry , analytical chemistry (journal) , chemical engineering , chemistry , nanotechnology , optoelectronics , catalysis , epitaxy , layer (electronics) , organic chemistry , medicine , alternative medicine , pathology , engineering
We present a study to determine the importance of phosphorus incorporation and hydrogen removal for the electrical activation of phosphorus dopants in Si:P δ ‐doped samples fabricated using phosphine dosing and molecular beam epitaxy (MBE). The carrier densities in these samples were determined from Hall effect measurements at 4 K sample temperature. An anneal to incorporate phosphorus atoms into substitutional lattice sites is critical to achieving full dopant activation after Si encapsulation by MBE. Whilst the presence of hydrogen can degrade the quality of the Si encapsulation layer, we show that it does not adversely impact the electrical activation of the phosphorus dopants. We discuss the relevance of our results to the fabrication of nano‐scale Si:P devices. (© 2005 WILEY‐VCH Verlag GmbH & C o. KGaA, Weinheim)