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Transport properties of double‐gate SiO 2 –Si–SiO 2 quantum well
Author(s) -
Prunnila Mika,
Ahopelto Jouni,
Sakaki Hiroyuki
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460707
Subject(s) - materials science , wafer , condensed matter physics , silicon , substrate (aquarium) , electrical resistivity and conductivity , magnetic field , hall effect , electron mobility , quantum hall effect , fabrication , landau quantization , doping , optoelectronics , electrical engineering , physics , medicine , oceanography , engineering , pathology , quantum mechanics , geology , alternative medicine
Abstract We report on fabrication and low temperature transport properties of double‐gate SiO 2 –Si–SiO 2 quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si–SiO 2 interface peak mobility of 1.9 m 2 /Vs (1.0 m 2 /Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub‐band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi‐layers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)