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THz‐emitter based on ballistic transport in nano‐pin diodes
Author(s) -
Renner F.,
Eckardt M.,
Schwanhäußer A.,
Klar O.,
Malzer S.,
Döhler G. H.,
Loata G.,
Löffler T.,
Roskos H.,
Hanson M.,
Driscoll D.,
Gossard A. C.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460706
Subject(s) - common emitter , optoelectronics , diode , terahertz radiation , capacitance , diffusion capacitance , nano , semiconductor , materials science , ballistic conduction , transit (satellite) , transit time , physics , engineering , composite material , public transport , electrode , quantum mechanics , transport engineering , electron
Conventional semiconductor‐based photomixers are limited by the carrier transit‐time‐roll‐off and the RC‐roll‐off of the device‐capacitance. We have developed a THz‐photomixer which can overcome both limitations and proves far superior to a conventional pin‐photomixer. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)