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The effect of charge on kink migration at 90° partial dislocations in SiC
Author(s) -
Blumenau A. T.,
Eberlein T. A. G.,
Jones R.,
Öberg S.,
Frauenheim T.,
Briddon P. R.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460504
Subject(s) - partial dislocations , core (optical fiber) , work (physics) , energetics , charge (physics) , materials science , recombination , condensed matter physics , density functional theory , partial charge , degradation (telecommunications) , chemical physics , molecular dynamics , dislocation , chemistry , physics , computational chemistry , electrical engineering , thermodynamics , composite material , quantum mechanics , biochemistry , gene , engineering
SiC bipolar devices show a degradation under forward‐biased operation which has been linked with a recombination enhanced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and 2H–SiC using the density functional based codes DFTB and AIMPRO . After in earlier theoretical work we reported on the structure, energetics and electronic activity of both of the Shockley partials, and on the formation and migration barriers of kinks, in this work we present first results on the effect of charge on the disloction kinks. The calculations give insights into the device degradation mechanism. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)