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Forward‐bias degradation in 4H–SiC p + nn + diodes: Influence of the mesa etching
Author(s) -
Camara N.,
Thuaire A.,
Bano E.,
Zekentes K.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460469
Subject(s) - electroluminescence , etching (microfabrication) , diode , silicon carbide , substrate (aquarium) , materials science , optoelectronics , mesa , reactive ion etching , silicon , degradation (telecommunications) , pin diode , analytical chemistry (journal) , chemistry , nanotechnology , electrical engineering , layer (electronics) , metallurgy , oceanography , engineering , chromatography , geology , computer science , programming language
We have investigated the appearance of defects in silicon carbide p + nn + 4H–SiC diodes by observing the forward‐bias‐induced light emission through the substrate. The spatial intensity distribution, the temporal evolution and the spectral content of the electroluminescence (EL) signal have been measured in order to detect, identify and understand the defect formation during forward‐bias application. It was found that mesa etching is a main cause for the formation of extended defects. Reduction of mesa‐etching‐induced defects is the subject of our investigations. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)