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Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an In x Ga 1– x N quantum well structure
Author(s) -
Coquillat D.,
Torres J.,
Le Vassor d'Yerville M.,
Legros R.,
Lascaray J. P.,
Liu C.,
Watson I. M.,
Martin R. W.,
Chong H. M. H.,
De La Rue R. M.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460457
Subject(s) - phonon , photonic crystal , dispersion (optics) , photon , condensed matter physics , crystal (programming language) , dispersion relation , materials science , optics , optoelectronics , physics , computer science , programming language
Angular‐dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting of selectively grown GaN pyramids containing a single In x Ga 1– x N/GaN quantum well. The dispersion of the photons exhibits strong photonic crystal characteristics, while the mean indium content of the ∼2 nm thickness In x Ga 1– x N layer was extracted from the angular dispersion of the phonon modes. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)