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Optimization of InAsSb photodetector for non‐cryogenic operation in the mid‐infrared range
Author(s) -
AïtKaci H.,
Nieto J.,
Rodriguez J. B.,
Grech P.,
Chevrier F.,
Salesse A.,
Joullié A.,
Christol P.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460456
Subject(s) - photodetector , optoelectronics , passivation , dark current , photodiode , infrared , materials science , specific detectivity , leakage (economics) , molecular beam epitaxy , substrate (aquarium) , optics , epitaxy , nanotechnology , layer (electronics) , physics , oceanography , geology , economics , macroeconomics
We present an InAsSb interband photodetector grown by molecular beam epitaxy on GaSb substrate which operates in the mid‐infrared domain (3–5 µm). To achieve uncooled high performance detection, the design of the structure was optimized to reduce the noise‐inducing currents due to generation‐recombination processes and diffusion currents. The technological procedure was further improved by using alkali sulfur passivation that suppresses surface leakage currents along the mesa edges. As a first result, the room temperature detectivity D * of the InAsSb photodiode, extracted from measurements, is comparable to the commercial HgCdTe device with a detectivity equals to 1 × 10 10 cm Hz 1/2 W –1 at about 3.5 µm. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)