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Enhancement of localization and confinement effects in quaternary group‐III nitride multi‐quantum wells on SiC substrate
Author(s) -
Anceau S.,
Lefebvre P.,
Suski T.,
Konczewicz L.,
Hirayama H.,
Aoyagi Y.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460455
Subject(s) - photoluminescence , quantum well , nitride , electric field , materials science , substrate (aquarium) , spontaneous emission , electron , alloy , condensed matter physics , recombination , quantum confined stark effect , chemistry , optoelectronics , stark effect , nanotechnology , physics , optics , geology , composite material , laser , biochemistry , oceanography , layer (electronics) , quantum mechanics , gene
The competition between radiative and nonradiative recombination of electron‐hole pairs in (Al,In,Ga)N/(Al,In,Ga)N quantum wells of two different compositions and various well widths was investigated in order to understand the microscopic mechanisms of the highly intense light emission from this type of structures. By using time‐resolved photoluminescence, we have verified that one can adjust the compositions of the quaternaries so as to optimize the confinement effects and to minimize the built‐in electric field which is present in such hexagonal group‐III nitride based QWs. The role of local potential fluctuations in the quaternary alloy on the localization of carriers was studied and analyzed by measuring the photoluminescence energy, intensity and dynamics versus temperature. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)